CURRICULUM VITAE

 

 

Surname                       :           Kounavis

First name                    :           Panagiotis

Nationality                    :           Greek

Place of Birth                :           Patra

Data of Birth                 :           November 5 1961

Marital status                ;           Married (two kids)

Scientific Employment:             Associate Professor, Department of Engineering Sciences, University of Patras

Address                                   :Department of Engineering Sciences, University of Patras

                                                 26504 Patra,  Tel. (2610)996281.

 

 

1. DEGREES.

 

(i)         Degree on Physics received by Physics Department of University of Patras (1984).

 

(ii)        Ph. D. Thesis received by Physics Department of University of Patras (1991).

 

 

2. CAREER HISTORY.

 

09/1986 – 02/90          After graduate student, Department of Physics University of Patras.

 

06/1989 - 10/1989      Visiting research fellow Department of Physics University of Crete

 

05/1991 – 02/1994      Post Doc., Department of Physics University of Patras.

 

06/1994 – 06/1996      Post Doc., Department of Chemical Engineering University of Patras.

 

12/1997 – 04/2005      Assistant Professor, Department of Engineering Sciences.University of Patras

 

04/2005 – to present    Associate Professor, Department of Engineering Sciences. University of Patras

 

 

3. TEACHING ACTIVITIES

 

Teaching of undergraduate courses and Laboratories in General Physics (Mechanics, Electricity-Magnetism, Optics, Modern Physics)

 

Supervisor of 10 Diploma Theses at the Department of Physics of University of Patras.

 

Supervisor of 1 Master Theses at the Engineering Department of University of Patras.

 

Supervisor of 2 PHD Theses at the Engineering Department of University of Patras.

 

 

4. RESEARCH AND SCIENTIFIC ACTIVITIES

 

Author of 24 research papers in international scientific journals.

 

Participations in 10 international conferences.

 

More than 120 citations by other scientists.

 

Reviewer in the following international journals:

Physical Review, Physical Review Letters, Journal of Applied Physics, Applied Physics Letters, Philos. Mag., Materials Research Bouletin, J. Non-Cryst. Solids.

 

Visits in research laboratories in the Europe (Marbourg Germany, Ecole Polytechnique France, Leuven, Belgium, Ulich Germany) and USA (Univ. of Utah).

 

Scientific responsible of 1 National research project.

 

 

5. RESEARCH AREA.

 

Deposition and study the optoelectronic properties of inorganic and organic amorphous, microcrystalline semiconductors.

 

 

6. EXPERIMENTAL TECHNIQUES.

 

i) Measurements optoelectronic properties of amorphous semiconductors (dc and ac photoconductivity).

ii) Measurements of the defect state distribution in the energy gap of amorphous semiconductors with the constant photocurrent and modulated photocurrent method.

iii) Optical absorption and reflectivity measurements for the determination of the absorption coefficient, index of refraction and the thickness of semiconducting thin films.

iv) Dark conductivity and thermoelectric power measurements of low or very high resistive semiconductors.

v) Hall effect measurements.

vi) Very weak ac electrical signals measurements by the lock-in amplification technique.

vii) Characterization of p-n devices and semiconductor-metal contacts.

viii) Transient electrical signals measurements.

ix) Deposition of amorphous semiconductors by glow discharge technique.

x) Deposition of amorphous semiconductors by RF sputtering technique.

xi) Fabrication of p-n devices by rf sputtering.

xii) Deposition of metals for electrical contacts in amorphous semiconductors and electronic devices by thermal evaporation.

xiii) Plasma treatment of thin film surfaces.

xiv) High and ultra high vacuum systems. Design and construction of vacuum systems i.e. thermal evaporators, optical cryostats etc.

xv) Computer communications with various electronic instruments (through RS232 and IEEE488), atomization of experiments.

 

 

7. PARTICIPATION IN RESEARCH PROJECTS.

 

            1. " New materials appropriate for photovoltaic applications".

Financial support from General Secretary of Research and Technology of Greece (1985‑87).

 

            2. "Kinetic study for the deposition of a‑Si:H solar cells".

Financial support by EEC (joule I) (1988‑1990).

 

            3. "Plasma deposition systems for photovoltaic quality amorphous silicon and alloys". Financial support by EEC (jour‑0081‑C), (1990‑92).

 

            4. "New and more stable a‑Si:H based materials for photovoltaics".

Financial support by EU (jour‑CT92‑0027)  (1992‑94).

 

            5. "High Efficiency through decreased Light Induced degradation and Optimization of amorphous Silicon" ("HELIOS") (1994-1996) financial support by EU.

 

 

8. PARTICIPATION IN INTERNATIONAL CONFERENCES.

 

            1. 11th International Conference of Amorphous and Liquid Semiconductors, Rome (1985) Italy.

 

            2. 12th International Conference of Amorphous and Liquid Semiconductors, Prague (1987) Czechoslovakia.

 

            3. 13th International Conference of Amorphous Semiconductors, Science and Technology, Ascheville (1989) USA.

 

            4. 20th International Conference on the Physics of Semiconductors, Thessaloniki (1990) Greece.

 

            5. 14th International Conference of Amorphous Semiconductors, Garmisch (1992) Germany.

 

            6. 13th Εuropean Photovoltaic Solar Energy Conference, Nice France  (1995).

 

7. 19th International Conference of Amorphous and Microcrystalline Semiconductors, Nice France  (2001).

 

8. 13th International Symposium on Non-Oxide Glasses, Pardubice Tsech Republic (2002).

 

9. 21st International Conference on the Physics of Semiconductors, Lisbone Portugal (2005).

 

10. 22nd International Conference on the Physics of Semiconductors, Brenkeridge USA (2007).

 

 

9. PARTICIPATION IN NATIONAL CONFERENCES.

 

            Panhelenic Conference of Solid State Physics: 2nd (Ioannina, 1986), 3rd (Patra, 1987), 4th (Athens, 1989), 8th (Ioannina, 1992) and 9th (Patra 1993).

 

 

 

10. FULL LIST OF PUBLICATIONS.

 

Ι. PH D THESIS.

            "Transport Phenomena in Amorphous Semiconductors".

            PH D Thesis, Patra 1991.

 

 

Ι. PUBLICATIONS IN BOOKS

 

1.Τhe role of the light exposure on the defect formation mechanism of a-Si:H.

P. Kounavis and E. Mytilineou

Solid State Phenomena (Special Volume on the Hydrogenated Amorphous Silicon) 44-46, (1995) p.715 Scitec publications, Switzerland. 

 

2. Modulated photocurrent spectroscopy for the determination of the capture cross-sections and the density of the gap states of disordered semiconductors

P. Kounavis

Published in a special volume “Recent Research Developments in Physics” 4(2003): 773-807 ISBN-7895-78-2 byTransworld Research Network

 

ΙΙ. PUBLICATIONS IN INTERNATIONAL REFEREED JOURNALS.

 

3. Thermopower, conductivity and Hall effect in V2O5  gels

P. Kounavis, A. Vomvas, E. Mytilineou, M. Roilos and L. Mouravski

J. Phys. C  21 (1988) 967.

 

4. p‑n junctions from sputtered Ge25Se75‑xBix

P. Kounavis, E. Mytilineou and M. Roilos.

J. Appl. Phys. 66 (1989) 708.

 

5. A study of n‑type conduction in amorphous chalcogenide sputtered films.

E. Mytilineou, P. Kounavis and B.S. Chao

J Phys: Cond. Matt. 1 (1989) 4687.

 

6. Drift mobility and photoconductivity for p‑and n‑type sputtered Ge25Se75‑xBix films.

P. Kounavis and E. Mytilineou.

J Non‑Cryst. Solids 114 (1989) 103.

 

7. Gap‑State Distribution in Ge25Se75‑xBix Sputtered Films By Phase Shift Analysis of Modulated Photocurrents.

P. Kounavis and E. Mytilineou.

J Non-Cryst. Solids 137&138 (1991) 955.

 

8. Trapping and recombination process in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivity.

P. Kounavis and E. Mytilineou.

J Non-Cryst. Solids 164‑166 (1993) 623.

 

9. Influence of plasma conditions on the defect formation mechanism in Amorphous Hydrogenated Silicon

P. Kounavis, D. Mataras, N. Spiliopoulos, E. Mytilineou, D. Rapakoulias.

J Appl. Phys. 75 (1994) 1599.

 

10. Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler-Wronski effect.

P. Kounavis

J Appl. Phys. 77 (1995) 3872.

 

11.The kinetics of the reversible light-induced phenomena in sputtered a-As2Se3.

P. Kounavis and E. Mytilineou.

Philos. Mag. Lett., 72 (1995) 117.

 

12. The defect states in sputtered Ge-Se-Bi films.

P. Kounavis and E. Mytilineou.

J Non-Cryst. Solids 201 (1996) 119.

 

13. Effective capture rates of carries in amorphous hydrogenated silicon.

P. Kounavis  D. Mataras and D. Rapakoulias.

J Appl. Physics 80, (1996) 2305.

 

14.Dilution-enhanced radical generation in silane glow discharges.

D. Mataras, F. Coutelieris, P. Kounavis and D. Rapakoulias.

J Phys. D: Appl. Phys. 29 (1996) 2452.

 

15. Photostructural Changes in amorphous Semiconductors

P. Kounavis and E. Mytilineou

J of Cond. Matter, 11 (1999) 9105.

 

16 Analysis of the modulated photocurrent experiment

P. Kounavis

Phys. Rev. B 64 (2001) 45204

 

17 Various defect states in a-Si:H by modulated photoconductivity spectroscopy

P. Kounavis

Phys. Rev 65 (2002) 155207.

           

18 Formation of a transient disordered state under a bias illumination in a-As2Se3

P. Kounavis and E. Mytilineou,

J Non-Cryst. Solids 299-302 (2002) 940.

 

19. The interaction of holes with the gap states of a-As2Se3 in annealed and light exposed states.

P. Kounavis

J. Non-Cryst. Solids 326&327 (2003) 98

 

20. The trapping centers of holes in a-As2Se3

P. Kounavis

Solid State Commun. 131 (2004) 47.

 

21. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon

P. Kounavis

J Appl. Physics 97, (2006) 023707.

 

22. The nature of the defect states above midgap and their role in the light-induced metastability of a-Si : H

P. Kounavis

J. Non-Cryst. Solids 352, 1068 (2006)

 

23. Modulated photocurrent as a powerful method to reveal predominant transport by the majority carriers of disordered semiconductors and to resolve all the kinds of probed gap states

M. Pomoni, A. Giannopoulou, P. Kounavis

J. Non-Cryst. Solids 354, 2238 (2008)

 

24. The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors

M. Pomoni, A. Giannopoulou A, P. Kounavis
Philos. Mag    90, 3441 (2010)

 

 

IV. PUBLICATIONS IN PROCEEDINGS OF INTERNATIONAL CONFERENCES

 

25. Correlation of deposition parameters and transport properties of a‑Si:H films.

P. Kounavis, E. Mytilineou, D. Mataras, S. Cavadias and D. Rapakoulias.

Proccedings of the 20th International Conference on the Physics of Semiconductors, Thessaloniki, Aug.  1990 p.2115.

 

26. Correlation between Dicharge Geometry and Film Propetries in PE‑CVD a‑Si:H.

D. Mataras, D. Rapakoulias, P. Kounavis, and E. Mytilineou.

Proceedings of the 10th E.C. Photovoltaic Solar Energy Conf., Lisbon Portugal (1990) p.165.

 

27. Influence of the deposition parameters to the gap state distribution and to the quality of PE‑CVD a‑Si:H.

P. Kounavis, N. Spiliopoulos, D. Mataras, E. Mytilineou and D. Rapakoulias.

Proceedings of the 11th European Photovoltaic Solar energy Conference, Montreux Switzerland (1992) p.726.

 

28. Surface states and defect formation mechanism in a-Si:H,using CPM method.

P. Kounavis, D. Mataras, N. Spiliopoulos, D. Rapakoulias.

Proceedings of the 12th European Photovoltaic Solar Εnergy Conference, Amsterdam Holand (1994) p.144.

 

29. The charge state of the dangling bonds dominating electron trapping and the kinetics of the defect relaxation in a-Si:H.

P.Kounavis, N. Spiliopoulos, D. Mataras and D. Rapakoulias.

Proceedings of the 13th European Photovoltaic Solar Εnergy Conference, Nice France (1995) p.288.

 

 

 

 

 

 

 

 

                

Σύντομο Βιογραφικό Σημείωμα

Παναγιώτης Κουνάβης

 

Αναπληρωτής Καθηγητής

Γενικού Τμήματος Πανεπιστημίου Πατρών

 

Οvoματεπώνυμo                                 :           Παναγιώτης Κουνάβης τoυ Γεωργίου.

Τόπoς γέvvησης                                  :           Πάτρα

Ημερoμηvία γέvvησης                        :           1961

Οικoγεvειακή κατάσταση                   :           Έγγαμος (2 παιδιά)

Δ/vση κατoικίας                                 :           Δροσίνη 8, Ψαθόπυργος 26504 Ρίο-Πατρών.

 

ΣΤΑΔΙΟΔΡΟΜΙΑ

1980 - 1984                 Φοιτητής Φυσικού Τμήματος Πανεπιστημίου Πατρών.

1984                            Πτυχίο Φυσικού Τμήματος Πανεπιστημίου Πατρών.

1986 - 1990                 Ειδικός Μεταπτυχιακός Υπότροφος (ΕΜΥ) Τμήμα Φυσικής Πανεπιστημίου Πατρών.

1986                            Επισκέπτης Ερευνητής Πανεπιστημίου Μarburg (Δ.Γερμανίας)

1989                            Επισκέπτης Ερευνητής Ερευνητικού Κέντρου Κρήτης

1991                            Διδακτορικό Δίπλωμα Φυσικού Τμήματος Παν/μίου Πατρών.

1991 - 1993                 Μεταδιδαδακτορικός ερευνητής Τμήμα Φυσικής Παν/μιο Πατρών.

1993                            Επισκέπτης ερευνητής Πανεπιστημίου KU του Leuven Βελγίου.

1993 - 1996                 Μεταδιδαδακτορικός ερευνητής Τμήματος Χημ.Μηχ. Παν/μιο Πατρών.

1998 - 2005                 Επίκουρος Καθηγητής Γενικού Τμήματος Παν/μίου Πατρών.

2005- σήμερα             Αναπληρωτής Καθηγητής Γενικού Τμήματος Παν/μίου Πατρών.

 

 

ΕΡΕΥΝΗΤΙΚΑ ΕΝΔΙΑΦΕΡΟΝΤΑ

 Εναπόθεση και χαρακτηρισμός οπτοηλεκτρονικών ιδιοτήτων ημιαγωγών.

 

 

ΕΜΠΕΙΡΙΑ ΣΕ ΠΕΙΡΑΜΑΤΙΚΕΣ ΤΕΧΝΙΚΕΣ

1)  Μετρήσεις οπτοηλεκτρονικών ιδιοτήτων αμόρφων ημιαγωγών (dc και ac φωτοαγωγιμότητα).

2) Μετρήσεις της πυκνότητας των καταστάσεων μέσα στο ενεργειακό χάσμα των ημιαγωγών με μέθοδο του σταθερού φωτορεύματος και τη μέθοδο του διαμορφωμένου φωτορεύματος.

3) Μετρήσεις της οπτικής απορρόφησης και ανακλαστικότητας  για τον προσδιορισμό     της οπτικής απορρόφισης, του δείκτη διάθλασης  και του πάχους λεπτών υμενίων  ημιαγωγών-μονωτών.

4) Μετρήσεις ηλεκτρικής αγωγιμότητας και θερμοηλεκτρικής τάσης υλικών μεγάλης ηλεκτρικής αντίστασης (μονωτές-ημιαγωγοί).

5)  Μετρήσεις φαινομένου Ηall.

6)  Μετρήσεις πολύ ασθενών ηλεκτρικών σημάτων (lock-in amplification technique).

7)  Μετρήσεις χαρακτηρισμού επαφών p-n και επαφών μετάλλου-ημιαγωγού.

8)  Μετρήσεις μεταβατικών (transient) ρευμάτων.

9)  Χαρακτηρισμών αμόρφων ημιαγωγών με φασματοσκοπία υπερύθρου (FTIR) και Raman.

10) Eναπόθεση αμόρφων υλικών με την μέθοδο glow discharge.

11) Εναπόθεση αμόρφων υλικών με την μέθοδο RF sputtering.

12) Παρασκευή επαφών p-n με τη μέθοδο του RF sputtering.

13)   Εναπόθεση διαφόρων μετάλλων σε ημιαγωγούς με την μέθοδο της θερμικής εξάχνωσης.

14) Εναπόθεση οργανικών ημιαγωγών με την μέθοδο της θερμικής εξάχνωσης.

15) Κατεργασία επιφανειών λεπτών film με πλάσμα.

16)   Συστήματα κενού και υπερυψηλού κενού. Σχεδιασμό και κατασκευή συσκευών κενού όπως: Θερμικής εξάχνωσης, οπτικού κρυοστάτη για μετρήσεις οπτοηλεκτρονικών ιδιοτήτων.

17) Επικοινωνία ηλεκτρονικού υπολογιστή με διάφορα ηλεκτρονικά όργανα (μέσω   RS232 και  IEEΕ488), αυτοματοποίηση πειραμάτων.

 

 

ΔΗΜΟΣΙΕΥΣΕΙΣ

Ι. PH D THESIS.

            "Transport Phenomena in Amorphous Semiconductors".

            PH D Thesis, Patra 1991.

 

Ι. PUBLICATIONS IN BOOKS

 

1.Τhe role of the light exposure on the defect formation mechanism of a-Si:H.

P. Kounavis and E. Mytilineou

Solid State Phenomena (Special Volume on the Hydrogenated Amorphous Silicon) 44-46, (1995) p.715 Scitec publications, Switzerland. 

 

2. Modulated photocurrent spectroscopy for the determination of the capture cross-sections and the density of the gap states of disordered semiconductors

P. Kounavis

Published in a special volume

“Recent Research Developments in Physics” 4(2003): 773-807 ISBN-7895-78-2

byTransworld Research Network

 

 

ΙΙ. PUBLICATIONS IN INTERNATIONAL REFEREED JOURNALS.

 

3. Thermopower, conductivity and Hall effect in V2O5  gels

P. Kounavis, A. Vomvas, E. Mytilineou, M. Roilos and L. Mouravski

J. Phys. C  21 (1988) 967.

 

4. p‑n junctions from sputtered Ge25Se75‑xBix

P. Kounavis, E. Mytilineou and M. Roilos.

J. Appl. Phys. 66 (1989) 708.

 

5. A study of n‑type conduction in amorphous chalcogenide sputtered films.

E. Mytilineou, P. Kounavis and B.S. Chao

J Phys: Cond. Matt. 1 (1989) 4687.

 

6. Drift mobility and photoconductivity for p‑and n‑type sputtered Ge25Se75‑xBix films.

P. Kounavis and E. Mytilineou.

J Non‑Cryst. Solids 114 (1989) 103.

 

7. Gap‑State Distribution in Ge25Se75‑xBix Sputtered Films By Phase Shift Analysis of Modulated Photocurrents.

P. Kounavis and E. Mytilineou.

J Non-Cryst. Solids 137&138 (1991) 955.

 

8. Trapping and recombination process in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivity.

P. Kounavis and E. Mytilineou.

J Non-Cryst. Solids 164‑166 (1993) 623.

 

9. Influence of plasma conditions on the defect formation mechanism in Amorphous Hydrogenated Silicon

P. Kounavis, D. Mataras, N. Spiliopoulos, E. Mytilineou, D. Rapakoulias.

J Appl. Phys. 75 (1994) 1599.

 

10. Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler-Wronski effect.

P. Kounavis

J Appl. Phys. 77 (1995) 3872.

 

11.The kinetics of the reversible light-induced phenomena in sputtered a-As2Se3.

P. Kounavis and E. Mytilineou.

Philos. Mag. Lett., 72 (1995) 117.

 

12. The defect states in sputtered Ge-Se-Bi films.

P. Kounavis and E. Mytilineou.

J Non-Cryst. Solids 201 (1996) 119.

 

13. Effective capture rates of carries in amorphous hydrogenated silicon.

P. Kounavis  D. Mataras and D. Rapakoulias.

J Appl. Physics 80, (1996) 2305.

 

14.Dilution-enhanced radical generation in silane glow discharges.

D. Mataras, F. Coutelieris, P. Kounavis and D. Rapakoulias.

J Phys. D: Appl. Phys. 29 (1996) 2452.

 

15. Photostructural Changes in amorphous Semiconductors

P. Kounavis and E. Mytilineou

J of Cond. Matter, 11 (1999) 9105.

 

16 Analysis of the modulated photocurrent experiment

P. Kounavis

Phys. Rev. B 64 (2001) 45204

 

17 Various defect states in a-Si:H by modulated photoconductivity spectroscopy

P. Kounavis

Phys. Rev 65 (2002) 155207.

           

18. Formation of a transient disordered metastable state under bias illumination in a-As2Se3

P. Kounavis and E. Mytilineou

J. Non-Cryst. Solids 299-302 (2002) 940.

 

19. The interaction of holes with the gap states of a-As2Se3 in annealed and light exposed states

P. Kounavis

J. Non-Cryst. Solids 326&327 (2003) 98.

 

20. The trapping centers of holes in a-As2Se3

P. Kounavis

Solid State Commun. 131 (2004) 47.

 

21. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon

J Appl. Physics 97, (2006) 023707.

 

22. The nature of the defect states above midgap and their role in the light-induced metastability of a-Si : H

P. Kounavis

J. Non-Cryst. Solids 352, 1068 (2006)

 

23. Modulated photocurrent as a powerful method to reveal predominant transport by the majority carriers of disordered semiconductors and to resolve all the kinds of probed gap states

Pomoni M, Giannopoulou A, P. Kounavis

J. Non-Cryst. Solids 354, 2238 (2008)

 

 

IV. PUBLICATIONS IN PROCEEDINGS OF INTERNATIONAL CONFERENCES

 

24. Correlation of deposition parameters and transport properties of a‑Si:H films.

P. Kounavis, E. Mytilineou, D. Mataras, S. Cavadias and D. Rapakoulias.

Proccedings of the 20th International Conference on the Physics of Semiconductors, Thessaloniki, Aug.  1990 p.2115.

 

25. Correlation between Dicharge Geometry and Film Propetries in PE‑CVD a‑Si:H.

D. Mataras, D. Rapakoulias, P. Kounavis, and E. Mytilineou.

Proceedings of the 10th E.C. Photovoltaic Solar Energy Conf., Lisbon Portugal (1990) p.165.

 

26. Influence of the deposition parameters to the gap state distribution and to the quality of PE‑CVD a‑Si:H.

P. Kounavis, N. Spiliopoulos, D. Mataras, E. Mytilineou and D. Rapakoulias.

Proceedings of the 11th European Photovoltaic Solar energy Conference, Montreux Switzerland (1992) p.726.

 

27. Surface states and defect formation mechanism in a-Si:H,using CPM method.

P. Kounavis, D. Mataras, N. Spiliopoulos, D. Rapakoulias.

Proceedings of the 12th European Photovoltaic Solar Εnergy Conference, Amsterdam Holand (1994) p.144.

 

28. The charge state of the dangling bonds dominating electron trapping and the kinetics of the defect relaxation in a-Si:H.

P.Kounavis, N. Spiliopoulos, D. Mataras and D. Rapakoulias.

Proceedings of the 13th European Photovoltaic Solar Εnergy Conference, Nice France (1995) p.288.

 

 

 

VΙ. PUBLICATIONS IN GREEK CONFERENCES.

 

            1. Ηλεκτρικές ιδιότητες κολλοειδών διαλυμάτων (gells) V2O5.

Π. Κουνάβης, Α. Βομβας, Ε. Μυτιληναίου Μ. Ροϊλός, και L.Murawski.

2ο Παν/νιο Συνέδριο της Φυσικής Στερεάς Κατάστασης (Ιωάννινα 1986).

 

            2. Αγωγιμότητα n‑τύπου σε άμορφα χαλκογενή Ge25Se75‑xBix films

Π. Κουνάβης, Ε. Μυτιληναίου, Ι. Σωτηρόπουλος και Μ. Ροϊλός.

3ο Παν/νιο Συνέδριο της Φυσικής Στερεάς Κατάστασης (Πάτρα 1987).

 

            3. Μηχανισμός Doping με Bi και επαφή p‑n σε a‑GeSe3.

Π. Κουνάβης, Ε. Μυτιληναίου και Μ. Ροϊλός και B. Chao.

4ο Παν/νιο Συνέδριο της Φυσικής Στερεάς Κατάστασης (Αθήνα 1988).

 

            4. Καταστάσεις στο ενεργειακό χάσμα αμόρφων ημιαγωγών.

Π. Κουνάβης και Ε. Μυτιληναίου.

8ο Παν/νιο Συνέδριο της Φυσικής Στερεάς Κατάστασης (Ιωάννινα 1992).

 

            5. Συγκριτική μελέτη των φαινομένων που παρατηρούνται με την έκθεση σε ισχυρό φωτισμό των a‑As2Se3 καί a‑Si:H.

Π. Κουνάβης.

9ο Παν/νιο Συνέδριο της Φυσικής Στερεάς Κατάστασης (Πάτρα 1993).