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What is E-Beam Lithography?
Electron Beam Lithography (EBL) is a specialized technique for creating extremely fine artificial nanotechnology patterns on a surface by the use of a focused driven electron beam. The purpose, as with photolithography, is to create very small structures in a resist that can subsequently be transferred to the substrate material, often by etching. But whereas the resolution in optical lithography is limited by the wavelength of light used for exposure, the electron beam has a wavelength so small that diffraction no longer defines the lithographic resolution.
