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Recent publications (with links)
1. The role of the
recombination centers on the modulated photocurrent: Determination of the gap
state parameters of semiconductors
Pomoni M, Giannopoulou A, Kounavis P
PHILOSOPHICAL MAGAZINE Volume:
90 Issue: 25
Pages: 3441-3461 Published:
2010
2. Modulated
photocurrent as a powerful method to reveal predominant transport by the
majority carriers of disordered semiconductors and to resolve all the kinds of
probed gap states
Pomoni M, Giannopoulou A, Kounavis P
JOURNAL OF NON-CRYSTALLINE SOLIDS Volume:
354 Issue: 19-25
Pages: 2238-2241 Published:
MAY 1 2008
3.
The nature of the defect states above midgap and their role in the light-induced
metastability of a-Si : H
Author(s): Kounavis P
Source: JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume: 352 Issue:
9-20 Pages: 1068-1070 Published:
JUN 15 2006
4. Light-induced
changes in the gap states above midgap of hydrogenated amorphous silicon
Kounavis P
JOURNAL OF APPLIED PHYSICS Volume:
97 Issue: 2
Article Number: 023707 Published:
JAN 15 2005
5.
The trapping
centers of holes in a-As2Se3
Kounavis P
SOLID STATE COMMUNICATIONS Volume:
131 Issue: 1
Pages: 47-51 Published:
JUL 2004
Selected publications
1.Τhe role of the light exposure on the defect formation mechanism of a-Si:H
P. Kounavis and E. Mytilineou
Solid State Phenomena (Special Volume on the Hydrogenated Amorphous Silicon) 44-46, (1995) p.715 Scitec publications, Switzerland.
2. Modulated photocurrent spectroscopy for the determination of the capture cross-sections and the density of the gap states of disordered semiconductors
P. Kounavis
Published in a special volume “Recent Research Developments in Physics” 4(2003): 773-807 ISBN-7895-78-2by Transworld Research Network
3. Photostructural Changes in amorphous Semiconductors
P. Kounavis and E. Mytilineou
J of Cond. Matter, 11 (1999) 9105.
4 Analysis of the modulated photocurrent experiment
P. Kounavis
Phys. Rev. B 64 (2001) 45204
5. Various defect states in a-Si:H by modulated photoconductivity spectroscopy
P. Kounavis
Phys. Rev 65 (2002) 155207.
6. Formation of a transient disordered metastable state under bias illumination in a-As2Se3
P. Kounavis and E. Mytilineou
J. Non-Cryst. Solids 299-302 (2002) 940.
7. The interaction of holes with the gap states of a-As2Se3 in annealed and light exposed states
J. Non-Cryst. Solids 326&327 (2003) 98.
8. The trapping centers of holes in a-As2Se3
P. Kounavis
Solid State Commun. 131 (2004) 47.
9. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon
P. Kounavis
J Appl. Physics 97, (1996) 023707.
J. Non-Cryst. Solids 352, 1068 (2006)
11. Modulated photocurrent as a powerful method to reveal predominant transport
J. Non-Cryst. Solids 354, 2238 (2008)
12.
The role of the
recombination centers on the modulated photocurrent: Determination of the gap
state parameters of semiconductors
Pomoni M, Giannopoulou A, Kounavis P
Philos. Mag. 90,
3441 (2010)