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Recent publications (with links)

1. The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors
Pomoni M, Giannopoulou A, Kounavis P
PHILOSOPHICAL MAGAZINE   Volume: 90   Issue: 25   Pages: 3441-3461   Published: 2010

2. Modulated photocurrent as a powerful method to reveal predominant transport by the majority carriers of disordered semiconductors and to resolve all the kinds of probed gap states
Pomoni M, Giannopoulou A, Kounavis P
JOURNAL OF NON-CRYSTALLINE SOLIDS   Volume: 354   Issue: 19-25   Pages: 2238-2241   Published: MAY 1 2008
 

3. The nature of the defect states above midgap and their role in the light-induced metastability of a-Si : H
Author(s): Kounavis P
Source: JOURNAL OF NON-CRYSTALLINE SOLIDS   Volume: 352   Issue: 9-20   Pages: 1068-1070   Published: JUN 15 2006
 

4. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon
Kounavis P
JOURNAL OF APPLIED PHYSICS   Volume: 97   Issue: 2 Article Number: 023707   Published: JAN 15 2005
 

5. The trapping centers of holes in a-As2Se3
Kounavis P
SOLID STATE COMMUNICATIONS   Volume: 131   Issue: 1   Pages: 47-51   Published: JUL 2004

 

Selected publications

1.Τhe role of the light exposure on the defect formation mechanism of a-Si:H

P. Kounavis and E. Mytilineou

Solid State Phenomena (Special Volume on the Hydrogenated Amorphous Silicon) 44-46, (1995) p.715 Scitec publications, Switzerland. 

2. Modulated photocurrent spectroscopy for the determination of the capture cross-sections and the density of the gap states of disordered semiconductors

P. Kounavis

Published in a special volume “Recent Research Developments in Physics” 4(2003): 773-807 ISBN-7895-78-2by Transworld Research Network

3. Photostructural Changes in amorphous Semiconductors

P. Kounavis and E. Mytilineou

J of Cond. Matter, 11 (1999) 9105.

4 Analysis of the modulated photocurrent experiment

P. Kounavis

Phys. Rev. B 64 (2001) 45204

5. Various defect states in a-Si:H by modulated photoconductivity spectroscopy

P. Kounavis

Phys. Rev 65 (2002) 155207.

6. Formation of a transient disordered metastable state under bias illumination in a-As2Se3

P. Kounavis and E. Mytilineou

J. Non-Cryst. Solids 299-302 (2002) 940.

7. The interaction of holes with the gap states of a-As2Se3 in annealed and light exposed states

P. Kounavis

J. Non-Cryst. Solids 326&327 (2003) 98.

8. The trapping centers of holes in a-As2Se3

P. Kounavis

Solid State Commun. 131 (2004) 47.

9. Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon

P. Kounavis

J Appl. Physics 97, (1996) 023707.

10. The nature of the defect states above midgap and their role in the light-induced metastability of a-Si :H

P. Kounavis

J. Non-Cryst. Solids 352, 1068 (2006)

11. Modulated photocurrent as a powerful method to reveal predominant transport

by the majority carriers of disordered semiconductors and to resolve all the kinds of probed gap states

Pomoni M, Giannopoulou A, P. Kounavis

J. Non-Cryst. Solids 354, 2238 (2008)

12. The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors
Pomoni M, Giannopoulou A, Kounavis P
Philos. Mag. 90, 3441 (2010)